shindengen 2SK2182 copyright & copy;2000 shindengen electric mfg.co.ltd outline dimensions ratings (f3f50vx2) 500v 3a case : e-pack vx-2 series power mosfet n-channel enhancement type (unit : mm) case : fto-220 ?? switching power supply of ac 100v input ?? high voltage power supply ?? inverter application ?? input capacitance (ciss) is small. especially, input capacitance at 0 biass is small. ?? the static rds(on) is small. ?? the switching time is fast. features ??absolute maximum ratings ?itc = 25???j item symbol conditions ratings unit storage temperature t stg -55?`150 ?? channel temperature t ch 150 drain-source voltage v dss 500 v gate-source voltage v gss ?}30 continuous drain current?idc?j i d 3 continuous drain current?ipeak) i dp 9 a continuous source current?idc?j i s 3 total power dissipation p t 25 w single pulse avalanche current i as t ch = 25?? 3 a dielectric strength v dis terminals to case, ac 1 minute 2 kv mounting torque tor ?i recommended torque : 0.3 nm ?j 0.5 nm
copyright & copy;2000 shindengen electric mfg.co.ltd 2SK2182( f3f50vx2 ) vx-2 series power mosfet electrical characteristics tc = 25 item symbol conditions min. typ. max. unit drain-source breakdown voltage v (br)dss i d = 1 ma, v gs = 0v 500 v zero gate voltage drain current i dss v ds = 500v, v gs = 0v 250 a gate-source leakage current i gss v gs = 30v, v ds = 0v 0. 1 forward tran conductance g fs i d = 1 .5a, v ds = 1 0v 0.9 2. 1 s static drain-source on- tate resistance r ds(on) i d = 1 .5a, v gs = 1 0v 1 .8 2.3 gate threshold voltage v th i d = 0.3ma, v ds = 1 0v 2.5 3.0 3.5 v source-drain diode forwade voltage v sd i s = 1 .5a, v gs = 0v 1 .5 the mal resistance jc junction to case 5.0 / total gate charge q g v dd = 400v, v gs = 1 0 v, i d = 3a 1 5nc input capacitance c iss 400 reverse transfer capacitance c rss v ds = 1 0v, v gs = 0v, f = 1 mh z 30 pf output capacitance c oss 90 turn-on time t on i d = 1 .5a, v gs = 1 0v, r l = 1 00 45 80 ns turn-off time t off 90 1 40
0 1 2 3 4 5 6 0 5 10 15 20 2SK2182 transfer characteristics v ds = 25v pulse test typ tc = - 55 c 25 c 100 c 150 c gate-source voltage v gs [v] drain current i d [a]
static drain-source on-state resistance 1 10 -50 0 50 100 150 2SK2182 v gs = 10v pulse test typ i d = 1.5a case temperature tc [ c] static drain-source on-state resistance r ds(on) [ w ]
gate threshold voltage 0 1 2 3 4 5 -50 0 50 100 150 2SK2182 v ds = 10v i d = 0.3ma typ case temperature tc [ c] gate threshold voltage v th [v]
safe operating area 0.01 0.1 1 10 100 1 10 100 1000 2SK2182 100 m s tc = 25 c single pulse 200 m s 1ms 10ms dc 10 m s drain-source voltage v ds [v] drain current i d [a] r ds(on) limit
transient thermal impedance 0.01 0.1 1 10 100 2SK2182 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 0.05 0.5 0.2 20 50 5 2 200 500 2000 5000 0.02 0.05 0.5 0.2 20 5 2 0.005 0.002 time t [s] transient thermal impedance q jc(t) [ c/w]
capacitance 10 100 1000 0 20 40 60 80 100 2SK2182 0.005 tc=25 c typ ciss coss crss drain-source voltage v ds [v] capacitance ciss coss crss [pf]
0 20 40 60 80 100 0 50 100 150 2SK2182 power derating power derating [%] case temperature tc [ c]
0 100 200 300 400 500 0 5 10 15 20 25 2SK2182 0 5 10 15 20 200v gate charge characteristics i d = 3a 100v v dd = 400v v gs v ds gate charge qg [nc] drain-source voltage v ds [v] gate-source voltage v gs [v]
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